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february 2011 doc id 010008 rev 1 1/15 15 STB24NM60N n-channel 600 v, 0.168 , 17 a mdmesh? ii power mosfet d2pak features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description these n-channel 600 v power mosfet devices are made using the second generation of mdmesh? technology. this revolutionary power mosfet associates a new vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converter. figure 1. internal schematic diagram order codes v dss (@tjmax) r ds(on) max. i d STB24NM60N 650 v < 0.19 17 a d2pak 1 3 !-v $ ' 3 table 1. device summary order codes marking package packaging STB24NM60N 24nm60n d2pak tape and reel www.st.com
contents STB24NM60N 2/15 doc id 010008 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STB24NM60N electrical ratings doc id 010008 rev 1 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 17 a i d drain current (continuous) at t c = 100 c 11 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 68 a p tot total dissipation at t c = 25 c 125 w dv/dt (2) 2. i sd 17 a, di/dt 400 a/s, peak v ds v (br)dss , v dd = 80% v (br)dss peak diode recovery voltage slope 15 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max. 1 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-pcb max. 30 c/w table 4. avalanche characteristics symbol parameter value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 6a e as single pulse avalanche energy (starting t j = 25 c, i d = i as , v dd = 50 v) 300 mj
electrical characteristics STB24NM60N 4/15 doc id 010008 rev 1 2 electrical characteristics (tcase = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 8 a 0.168 0.19 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 1400 44 7.4 - pf pf pf c oss eq. (1) 1. c o(eff). is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v ds . equivalent output capacitance v ds = 0 to 480 v, v gs = 0 - 190 - pf r g gate input resistance f=1 mhz open drain - 5 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 17 a, v gs = 10 v (see figure 15) - 46 7 23 - nc nc nc
STB24NM60N electrical characteristics doc id 010008 rev 1 5/15 table 7. switching times symbol parameter test conditions min. typ. max unit t d(on) t r(v) t d(off) t f(i) turn-on delay time voltage rise time turn-off-delay time fall time v dd = 300 v, i d = 8.5 a, r g = 4.7 , v gs = 10 v (see figure 14) - 11.5 16.5 73 37 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 17 68 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 17 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 17 a, di/dt = 100 a/s v dd = 60 v (see figure 16) - 340 4.6 27 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 17 a, di/dt = 100 a/s v dd = 60 v t j = 150 c (see figure 16) - 404 5.7 28 ns c a
electrical characteristics STB24NM60N 6/15 doc id 010008 rev 1 2.1 electrical characteri stics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on resistance oper a tion in thi s a re a i s limited b y m a x r d s (on) tj=150c tc=25c s inlge p u l s e i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am07976v1 i d 20 10 0 0 10 v d s (v) 20 (a) 5 15 25 3 0 40 v g s = 7 v v g s = 5 v v g s = 6 v v g s = 10 v am07977v1 i d 20 10 0 0 4 v g s (v) 8 (a) 2 6 10 3 0 v d s = 20 v 5 15 25 3 5 40 am0797 8 v2 v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =4 8 0v i d = 17a 50 12 3 00 200 100 0 400 500 v d s v g s am07979v1 r d s (on) 0.164 0.162 0.160 0.15 8 0 10 i d (a) ( ) 5 15 0.166 0.16 8 0.170 0.172 v g s =10v 0.174 0.176 am0 8 5 3 4v1
STB24NM60N electrical characteristics doc id 010008 rev 1 7/15 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. normalized b vdss vs temperature figure 13. source-drain diode forward characteristics c 3 100 2100 1100 100 0 40 v d s (v) (pf) 20 4100 60 ci ss co ss cr ss 5100 6100 am0 8 5 3 5v1 e o ss 1.0 0 0 100 v d s (v) ( j) 2.0 200 3 .0 3 00 400 4.0 500 6.0 5.0 7.0 8 .0 9.0 500 am0 8 5 3 6v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d = 250 a am0 8 5 3 7v1 r d s (on) 2.0 1.5 1.0 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 i d = 8 a am0 8 5 38 v1 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.95 0.9 8 1.00 1.0 3 1.06 i d = 1 ma am0 8 5 3 9v1 v s d 0 4 i s d (a) (v) 2 10 6 8 0.4 0.6 0. 8 1.0 t j =-50c t j =150c t j =25c 0.2 1.2 1.4 0 12 am09005v1
test circuits STB24NM60N 8/15 doc id 010008 rev 1 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive wavefo rm figure 19. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STB24NM60N package mechanical data doc id 010008 rev 1 9/15 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STB24NM60N 10/15 doc id 010008 rev 1 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 e10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
STB24NM60N package mechanical data doc id 010008 rev 1 11/15 figure 20. d2pak (to-263) drawing figure 21. d2pak footprint (a) a. all dimension ar e in millimeters 0079457_r 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
packaging mechanical data STB24NM60N 12/15 doc id 010008 rev 1 5 packaging mechanical data table 10. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
STB24NM60N packaging mechanical data doc id 010008 rev 1 13/15 figure 22. tape figure 23. reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history STB24NM60N 14/15 doc id 010008 rev 1 6 revision history table 11. document revision history date revision changes 23-feb-2011 1 first release.
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